Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
نویسندگان
چکیده
منابع مشابه
Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and pimplanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and ch...
متن کاملAtomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices
The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by E...
متن کاملHall Factor Calculation for the Characterization of Transport Properties in n-channel 4H-SiC MOSFETs
For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the re...
متن کاملHall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm -2 with a peak Hall mobility of 42.4 cm 2 .V -1 .s -1 . Coulomb scattering as dominant sc...
متن کاملModeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects
Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Energies
سال: 2019
ISSN: 1996-1073
DOI: 10.3390/en12122310